Gate structures for semiconductor devices

ABSTRACT

Embodiments of a semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a substrate and a first metal gate structure formed over the substrate. The first metal gate structure has a first width. The semiconductor device structure further includes a first contact formed adjacent to the first metal gate structure and a second metal gate structure formed over the substrate. The second metal gate structure has a second width smaller than the first width. The semiconductor device structure further includes an insulating layer formed over the second metal gate structure and a second contact self-aligned to the second metal gate structure.

PRIORITY DATA

The present application is a continuation application of U.S. patentapplication Ser. No. 15/898,919, filed Feb. 19, 2018, issuing as U.S.Pat. No. 10,522,412, which is a continuation application of U.S. patentapplication Ser. No. 15/383,837, filed Dec. 19, 2016, and issued as U.S.Pat. No. 9,899,265, which is a divisional application of U.S. patentapplication Ser. No. 14/178,906, filed Feb. 12, 2014, and issued as U.S.Pat. No. 9,524,965, of which all are incorporated by reference in theirentireties.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductive layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon.

One of the important drivers for increased performance in computers isthe higher levels of integration of circuits. This is accomplished byminiaturizing or shrinking device sizes on a given chip. Tolerances playan important role in being able to shrink dimensions on a chip.

As technology nodes shrink, in some integrated circuit (IC) designs,there has been a desire to replace the typically polysilicon gate with ametal gate to improve device performance with the decreased featuresizes. One process of forming the metal gate is termed the “gate last”process. In a “gate last” process, the final metal gate is fabricatedlast which allows for a reduced number of subsequent processes.

However, although existing “gate last” processes have been generallyadequate for their intended purposes, as device scaling-down continues,they have not been entirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a top view representation of a semiconductor devicestructure in accordance with some embodiments.

FIGS. 2A to 2K illustrate cross-section representations of variousstages of forming the semiconductor device structure shown along lineA-A′ illustrated in FIG. 1 in accordance with some embodiments.

FIG. 3 illustrates a cross-section representation of the semiconductordevice structure shown along line B-B′ illustrated in FIG. 1 inaccordance with some embodiments.

FIG. 4A illustrates a top view representation of a semiconductor devicestructure in accordance with some embodiments.

FIG. 4B illustrates a cross section representation of the semiconductordevice structure shown along line C-C′ illustrated in FIG. 4A inaccordance with some embodiments.

FIG. 4C illustrates a cross section representation of the semiconductordevice structure shown along line D-D′ illustrated in FIG. 4A inaccordance with some embodiments.

DETAILED DESCRIPTION

The making and using of the embodiments of the disclosure are discussedin detail below. It should be appreciated, however, that the embodimentscan be embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative, and do not limit thescope of the disclosure.

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the disclosure. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Moreover,the performance of a first process before a second process in thedescription that follows may include embodiments in which the secondprocess is performed immediately after the first process, and may alsoinclude embodiments in which additional processes may be performedbetween the first and second processes. Various features may bearbitrarily drawn in different scales for the sake of simplicity andclarity. Furthermore, the formation of a first feature over or on asecond feature in the description that follows include embodiments inwhich the first and second features are formed in direct contact, andmay also include embodiments in which additional features may be formedbetween the first and second features, such that the first and secondfeatures may not be in direct contact.

Some variations of the embodiments are described. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements.

Embodiments of a semiconductor device structure are provided inaccordance with some embodiments of the disclosure. The semiconductordevice structure may include a number of gate structures having variouschannel lengths (e.g. various gate widths). Generally, gate structureshaving relatively small channel lengths also tend to have small pitch.However, when the pitch is too small, risks of shortage between the gatestructure and the contact formed adjacent to the gate structureincrease. Therefore, the gate structures are shortened and an insulatinglayer is formed over the shortened gate structures to prevent theshortage between the gate structures and the contact. In addition, thecontact can be self-aligned to the gate structure.

FIG. 1 illustrates a top view representation of a semiconductor devicestructure 100 in accordance with some embodiments. Semiconductor devicestructure 100 includes a wide metal gate structure 118 and a shortenednarrow metal gate structure 120′ formed over a substrate 102. The widthof wide metal gate structure 118 is greater than the width of shortenednarrow metal gate structure 120′. In addition, the height of wide metalgate structure 118 is greater than the height of shortened narrow metalgate structure 120′.

In addition, a first contact 132 is formed adjacent to wide metal gatestructure 118, and a second contact 134 is adjacent to shortened narrowmetal gate structure 120′. In some embodiments, wide metal gatestructure 118, shortened narrow metal gate structure 120′, first contact132, and second contact 134 are formed over substrate 102, and shallowtrench isolation (STI) regions 204 are formed in substrate 102.

FIGS. 2A to 2K illustrate cross-section representations of variousstages of forming semiconductor device structure 100 shown along lineA-A′ illustrated in FIG. 1 in accordance with some embodiments.

As shown in FIG. 2A, a substrate 102 is provided in accordance with someembodiments. Substrate 102 may be a semiconductor wafer such as asilicon wafer. Alternatively or additionally, substrate 102 may includeelementary semiconductor materials, compound semiconductor materials,and/or alloy semiconductor materials. Examples of the elementarysemiconductor materials may be, but are not limited to, crystal silicon,polycrystalline silicon, amorphous silicon, germanium, and/or diamond.Examples of the compound semiconductor materials may be, but are notlimited to, silicon carbide, gallium arsenic, gallium phosphide, indiumphosphide, indium arsenide, and/or indium antimonide. Examples of thealloy semiconductor materials may be, but are not limited to, SiGe,GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP.

In some embodiments, substrate 102 includes structures such as dopedregions, isolation features, interlayer dielectric (ILD) layers, and/orconductive features. In addition, substrate 102 may further includesingle or multiple material layers to be patterned. For example, thematerial layers may include a silicon layer, a dielectric layer, and/ora doped poly-silicon layer.

A wide dummy gate structure 104 and a narrow dummy gate structure 106are formed over substrate 102, as shown in FIG. 2A in accordance withsome embodiments. In some embodiments, wide dummy gate structure 104 hasa first width W₁, and narrow dummy gate structure 106 has a second widthW₂ smaller than first width W₁. In some embodiments, first width W₁ ofwide dummy gate substrate 104 is in a range from about 10 nm to about500 nm. In some embodiments, second width W₂ of narrow dummy gatestructure 106 is in a range from about 5 nm to about 250 nm. In someembodiments, the ratio of first width W₁ to second width W₂ is in arange from about 2 to about 15.

In some embodiments, wide dummy gate structure 104 and narrow dummy gatestructure 106 respectively include a dummy gate dielectric layer 108 anda dummy gate electrode layer 110. In some embodiments, dummy gatedielectric layer 108 is made of high-k dielectric materials, such asmetal oxides, metal nitrides, metal silicates, transition metal-oxides,transition metal-nitrides, transition metal-silicates, or oxynitrides ofmetals. Examples of the high-k dielectric material include, but are notlimited to, hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafniumsilicon oxynitride (HfSiON), hafnium tantalum oxide (HfTaO), hafniumtitanium oxide (HfTiO), hafnium zirconium oxide (HfZrO), siliconnitride, silicon oxynitride, zirconium oxide, titanium oxide, aluminumoxide, hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, or other applicabledielectric materials. In some embodiments, dummy gate electrode layer110 is made of polysilicon.

Wide dummy gate structure 104 and narrow dummy gate structure 106 may beformed by a procedure including deposition, photolithography patterning,and etching processes. The deposition processes may include chemicalvapor deposition (CVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), high density plasma CVD (HDPCVD), metal organic CVD(MOCVD), or plasma enhanced CVD (PECVD).

The photolithography patterning processes may include photoresistcoating (e.g., spin-on coating), soft baking, mask aligning, exposure,post-exposure baking, developing the photoresist, rinsing, drying (e.g.,hard baking), and/or other applicable processes. The etching processesmay include dry etching, wet etching, and/or other etching methods(e.g., reactive ion etching).

It should be noted that wide dummy gate structure 104 and narrow dummygate structure 106 may be adjacent to each other or other structures maybe formed between wide dummy gate structure 104 and narrow dummy gatestructure 106, and the scope of the disclosure is not intended to belimiting.

In some embodiments, a sealing layer 301 is formed on the sidewalls ofwide dummy gate substrate 104 and narrow dummy gate structure 106.Sealing layer 108 may protect wide dummy gate substrate 104 and narrowdummy gate structure 106 from damage or loss during subsequentprocessing and may also prevent oxidation during subsequent processing.In some embodiments, sealing layer 301 is made of silicon nitride,silicon oxide, silicon oxynitride, silicon carbide, or other applicabledielectric materials. Sealing layer 301 may include a single layer ormultiple layers.

Spacers 303 are further formed on sealing layer 301 in accordance withsome embodiments. In some embodiments, spacers 303 are made of siliconnitride, silicon oxide, silicon carbide, silicon oxynitride, or otherapplicable materials. Spacers 303 may be formed by deposition andetching processes.

In addition, various doped regions may also be formed in substrate 102.In some embodiments, lightly doped source/drain (LDD) regions 305 andsource/drain (S/D) regions 307 are formed in substrate 102, as shown inFIG. 2A in accordance with some embodiments. LDD regions 305 and S/Dregions 307 may be formed by ion implantation processes,photolithography, diffusion, and/or other applicable processes. In someembodiments, LDD regions 305 and S/D regions 307 are doped with p-typedopants, such as boron or BF₂, and/or n-type dopants, such as phosphorusor arsenic.

After wide dummy gate structure 104 and narrow dummy gate structure 106are formed, a contact etch stop layer (CESL) 309 is formed to cover widedummy gate structure 104 and narrow dummy gate structure 106 oversubstrate 102, as shown in FIG. 2B in accordance with some embodiments.In some embodiments, CESL 309 is made of silicon nitride, siliconoxynitride, and/or other applicable materials. CESL 309 may be formed byplasma enhanced CVD, low pressure CVD, ALD, or other applicableprocesses.

After CESL 309 is formed, an ILD layer 112 is formed on CESL 309 oversubstrate 102 in accordance with some embodiments. ILD layer 112 mayinclude multilayers made of multiple dielectric materials, such assilicon oxide, silicon nitride, silicon oxynitride, tetraethoxysilane(TEOS), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG),low-k dielectric material, and/or other applicable dielectric materials.Examples of low-k dielectric materials include, but are not limited to,fluorinated silica glass (FSG), carbon doped silicon oxide, amorphousfluorinated carbon, parylene, bis-benzocyclobutenes (BCB), or polyimide.ILD layer 112 may be formed by chemical vapor deposition (CVD), physicalvapor deposition, (PVD), atomic layer deposition (ALD), spin-on coating,or other applicable processes.

Afterwards, a polishing process is performed to ILD layer 112, as shownin FIG. 2C in accordance with some embodiments. In some embodiments, ILDlayer 112 is planarized by a chemical mechanical polishing (CMP) processuntil the top surfaces of wide dummy gate structure 104 and narrow dummygate structure 106 are exposed.

After the polishing process is performed, wide dummy gate structure 104is replaced by wide metal gate structure 118, and narrow dummy gatestructure 106 is replaced by a narrow metal gate structure 120. Morespecifically, wide dummy gate structure 104 and narrow dummy gatestructure 106 are removed to form a wide trench 114 and a narrow trench116, as shown in FIG. 2D in accordance with some embodiments. In someembodiments, dummy gate electrode layer 110 is removed by a firstetching process, and dummy gate dielectric layer 108 is removed by asecond etching process after the first etching process is performed.Afterwards, wide metal gate structure 118 and narrow metal gatestructure 120 are respectively formed in wide trench 118 and narrowtrench 120, as shown in FIG. 2E in accordance with some embodiments.

In some embodiments, wide metal gate structure 118 and narrow metal gatestructure 120 respectively include a gate dielectric layer 122, a workfunction metal layer 124, and a metal gate electrode layer 126.

In some embodiments, gate dielectric layer 122 is made of high kdielectric materials. Examples of the high k dielectric material mayinclude, but are not limited to, hafnium oxide (HfO₂), hafnium siliconoxide (HfSiO), hafnium silicon oxynitride (HfSiON), hafnium tantalumoxide (HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide(HfZrO), metal oxides, metal nitrides, metal silicates, transition metaloxides, transition metal nitrides, transition metal silicates,oxynitrides of metals, metal aluminates, zirconium silicate, zirconiumaluminate, silicon oxide, silicon nitride, silicon oxynitride, zirconiumoxide, titanium oxide, aluminum oxide, or hafnium dioxide-alumina(HfO₂—Al₂O₃) alloy.

Work function metal layer 124 is formed over gate dielectric layer 122.Work function metal layer 124 is tuned to have a proper work function.For example, if a P-type work function metal (P-metal) for a PMOS deviceis desired, TiN, WN, or W may be used. On the other hand, if an N-typework function metal (N-metal) for NMOS devices is desired, TiAl, TiAlN,or TaCN, may be used.

Metal gate electrode layer 126 is formed over work function metal layer124. In some embodiments, metal gate electrode layer 126 is made of aconductive material, such as aluminum, copper, tungsten, titanium,tantulum, titanium nitride, tantalum nitride, nickel silicide, cobaltsilicide, TaC, TaSiN, TaCN, TiAl, TiAlN, or other applicable materials.Gate dielectric layer 122, work function metal layer 124, and metal gateelectrode layer 126 may be formed by any applicable process to anyapplicable thickness.

It should be noted that additional layers may be formed above and/orbelow gate dielectric layer 122, work function metal layer 124, andmetal gate electrode layer 126, such as liner layers, interface layers,seed layers, adhesion layers, barrier layers, or the like. In addition,gate dielectric layer 122, work function metal layer 124, and metal gateelectrode layer 126 may include one or more materials and/or one or morelayers.

As shown in FIG. 2E, wide metal gate structure 118 is formed in widetrench 114 and has first width W₁. Narrow metal gate structure 120 isformed in narrow trench 116 and has second width W₂ smaller than firstwidth W₁. However, when second width W₂ of narrow metal gate structure120 is too small, it may be difficult to align and form second contact134 without shortage between narrow metal gate structure 120 and secondcontact 134. Therefore, narrow metal gate structure 120 is shortened byan etching back process to form shortened narrow metal gate structure120′, such that an insulating layer 128 can be formed on shortenednarrow metal gate structure 120′ to prevent shortage between secondcontact 134 and shortened narrow metal gate structure 120′.

In addition, during the etching back process, wide metal gate structure118 may also be etched. However, if wide metal gate structure 118 andnarrow metal gate structure 120 are both etched by the etching backprocess, the amount of the top portion of wide metal gate structure 118removed by the etching back process will be greater than the amount ofthe top portion of narrow metal gate structure 120 removed by theetching back process due to the loading effect. That is, too much widemetal gate structure 118, such as the top portion of work function metallayer 124 and metal gate electrode layer 126 of wide metal gatestructure 118, may be removed by the etching back process. Therefore,shortened wide metal gate structure may be damaged, and the thresholdvoltage of the structure may be changed. Accordingly, a mask structure311 is used to prevent wide metal gate structure 118 from being damagedby the etching back process, as shown in FIG. 2F in accordance with someembodiments.

As shown in FIG. 2F, mask structure 311 is formed over wide metal gatestructure 118 to protect wide metal gate structure 118 from thesequential etching process in accordance with some embodiments. As shownin FIG. 2F, mask structure 311 covers wide metal gate structure 118 butdoes not cover narrow metal gate structure 120. Therefore, wide metalgate structure 118 is protected by mask structure 311 during thesubsequent etching back process while the top surface of narrow metalgate structure 120 is exposed. In some embodiments, mask structure 311includes a photoresist layer and a bottom anti-reflective coating (BARC)layer.

After mask structure 311 is formed, an etching back process 127 isperformed to shorten narrow metal gate structure 120, as shown in FIG.2G in accordance with some embodiments. Since wide metal gate structure118 is protected by mask structure 311, the height of wide metal gatestructure 118 remains after etching back process 127 is performed.However, the top surface of narrow metal gate structure 120 is exposedduring etching back process 127, and therefore narrow metal gatestructure 120 is shortened to form shortened narrow metal gate structure120′ after etching back process 127 is performed.

In some embodiments, wide metal gate structure 118 has a first heightH₁, and shortened narrow metal gate structure 120′ has a second heightH₂ less than first height H₁. In some embodiments, first height H₁ is ina range from about 400 A to about 1000 A. In some embodiments, secondheight H₂ is in a range from 100 A to about 990 A. In some embodiments,the ratio of first height H₁ to second height H₂ is in a range fromabout 4 to about 10.

In addition, since wide metal gate structure 118 is formed by replacingwide dummy gate structure 104 and shortened narrow metal gate structure120′ is formed by replacing narrow dummy gate structure 106, wide metalgate structure 118 also has first width W₁ and shortened narrow metalgate structure 120′ has second width W₂ smaller than first width W₁. Insome embodiments, the ratio of first height H₁ to first width W₁ is in arange from about 25 to about 1. In some embodiments, the ratio of secondheight H₂ to second width W₂ is in a range from about 1 to about 30.

After etching back process 127 is performed, mask structure 311 isremoved, and insulating layer 128 is formed on shortened narrow metalgate structure 120′ in accordance with some embodiments. As shown inFIG. 2H, insulating layer 128 is formed on shortened narrow metal gatestructure 120′ but not on wide metal gate structure 118. In someembodiments, insulating layer 128 is formed by depositing an insulatingmaterial over substrate 102 and removing the top portion of theinsulating material to expose the top surface of wide metal gatestructure 118.

In some embodiments, insulating layer 128 has a third height H₃. In someembodiments, third height H₃ is in a range from about 1 A to about 300A. In some embodiments, first height H₁ of wide metal gate structure 118is substantially equal to the sum of second height H₂ of shortenednarrow metal gate structure 120′ and third height H₃ of insulating layer128.

In some embodiments, insulating layer 128 is made of nitride materials,carbide materials, or oxide materials, such as silicon nitride, siliconcarbide, silicon oxynitride, or aluminum oxide. In addition, other low-kdielectric materials may also be used to form insulating layer 128.Insulating layer 128 may be formed by depositing an insulating materialover substrate 102 and performing a CMP process afterwards. Theinsulating material may be deposited by a CVD process.

Next, a dielectric layer 130 is formed on ILD layer 112, insulatinglayer 128, and wide metal gate structure 118 as shown in FIG. 2I inaccordance with some embodiments. In some embodiments, dielectric layer130 is made of silicon oxide, silicon nitride, silicon oxynitride, orother applicable dielectric materials similar to, or the same as, ILDlayer 112. Dielectric layer 130 may be formed by a CVD process.

Afterwards, a photoresist layer 313 is formed over dielectric layer 130,as shown in FIG. 2I in accordance with some embodiments. Photoresistlayer 313 has a first opening 315 and a second opening 317. An etchingprocess is performed to remove the portions of ILD layer 112 anddielectric layer 130 below first opening 315 and second opening 317 ofphotoresist layer 313, as shown in FIG. 2J in accordance with someembodiments. A first contact trench 319 and a second contact trench 321are therefore formed. In some embodiments, the etching process is a wetetching process. The widths of first contact trench 319 and secondcontact trench 321 may be adjusted as required.

Next, first contact 132 and second contact 134 are formed in firstcontact trench 319 and second contact trench 321 respectively, as shownin FIG. 2K in accordance with some embodiments. In some embodiments,first contact 132 and second contact 134 are made of conductivematerials such as aluminum, copper, tungsten, titanium, tantulum,titanium nitride, tantalum nitride, nickel silicide, cobalt silicide,TaC, TaSiN, TaCN, TiAl, TiAlN, other applicable conductive materials, ora combination thereof.

As shown in FIG. 2K, first contact 132 is formed over the S/D region 307adjacent to wide metal gate structure 118, and second contact 134 isformed over the S/D region 307 adjacent to shortened narrow metal gatestructure 120′. In addition, since insulating layer 128 is formed onshortened narrow metal gate structure 120′ and is configured to preventshortage between second contact 134 and shortened narrow metal gatestructure 120′, second contact 134 can be self-aligned to shortenednarrow metal gate structure 120′. That is, insulating layer 128 can beused as a mask when second contact trench 321 is formed by the etchingprocess, as shown in FIG. 2J. Therefore, second contact 134 formed insecond contact trench 321 can be aligned to shortened narrow metal gatestructure 120′, while second contact 134 will not in direct contact withshortened narrow metal gate structure 120′.

As described previously, insulating layer 128 is formed on shortenednarrow metal gate structure 120′ to prevent shortage between secondcontact 134 and shortened narrow metal gate structure 120′. Therefore,second contact 134 can be a self-aligned contact aligned to shortenednarrow metal gate structure 120′. In addition, since mask structure 311is used to protect wide metal gate structure 118 during etching backprocess 127, conductive materials of wide metal gate structure 118 willnot be damaged, and the threshold voltage remains as designed.

Referring back to FIG. 1, semiconductor device structure 100 furtherincludes a third shortened metal gate structure 120″ and a third contact134′ in accordance with some embodiments. FIG. 3 illustrates across-section representation of semiconductor device structure 100 shownalong line B-B′ illustrated in FIG. 1 in accordance with someembodiments. Materials and processes for forming third shortened metalgate structure 120″ are similar to those for forming shortened narrowmetal gate structure 120′. More specifically, third shortened metal gatestructure 120″ also includes gate dielectric layer 122, work functionmetal layer 124, and metal gate electrode layer 126. In addition,insulating layer 128 is formed on third shortened metal gate structure120″.

As shown in FIG. 1, wide metal gate structure 118 has a first length L₁,and third shortened metal gate structure 120″ has a second length L₂smaller than first length L₁. Since third shortened metal gate structure120″ has a relatively small length, the risks of shortage between thirdshortened metal gate structure 120″ and third contact 134′ formedadjacent to third shortened metal gate structure 120″ also increase.Therefore, insulating layer 128 is also formed on third shortened metalgate structure 120″ to prevent the shortage between third shortenedmetal gate structure 120″ and third contact 134′, as shown in FIG. 3 inaccordance with some embodiments. In some embodiments, the materials andformation processes of third contact 134′ are similar to that of secondcontact 134. In some embodiments, third contact 134′ is a self-alignedcontact.

It should be noted that wide metal gate structure 118, shortened narrowmetal gate structure 120′, third shortened metal gate structure 120″shown in FIG. 2 are merely examples, the scope of the disclosure is notintended to be limiting. In some embodiments, semiconductor devicestructure only includes two metal gate structures, such as wide metalgate structure 118 and shortened narrow metal gate structure 120′. Insome embodiments, semiconductor device structure includes more thanthree metal gate structures.

In addition, the method described above, which includes the use of maskstructure 311, may also be used to form a semiconductor device structureincluding fin field-effect transistor (FinFET) structures. FIG. 4Aillustrates a top view representation of a semiconductor devicestructure 400 in accordance with some embodiments. FIG. 4B illustrates across section representation of semiconductor device structure 400 shownalong line C-C′ illustrated in FIG. 4A in accordance with someembodiments. FIG. 4C illustrates a cross section representation ofsemiconductor device structure 400 shown along line D-D′ illustrated inFIG. 4A in accordance with some embodiments.

As shown in FIG. 4A, semiconductor device structure 400 includes afourth gate structure 518, a fifth gate structure 520′, and a sixth gatestructure 520″ formed over substrate 102. In addition, fourth gatestructure 518, fifth gate structure 520′, and sixth gate structure 520″are formed across fin structures 502 respectively. First contact 132 isformed adjacent to fourth gate structure 518. Second contact 134 isformed adjacent to fifth gate structure 520′. Third contact 134′ isformed adjacent to sixth gate structure 520″.

As shown in FIG. 4B, fourth gate structure 518 may be similar to widemetal gate structure 118, and fifth gate structure 520′ may be similarto shortened narrow metal gate structure 120′ in accordance with someembodiments. In some embodiments, fourth gate structure 518 and fifthgate structure 520′ respectively include gate dielectric layer 122, workfunction metal layer 124, and metal gate electrode layer 126. Inaddition, insulating layer 128 is formed on fifth gate structure 520′but not on fourth gate structure 518, for fifth gate structure 520′having a relatively small width. Therefore, second contact 134 may be aself-aligned contact aligned to fifth gate structure 520′.

As shown in FIG. 4C, sixth gate structure 520″ may be similar to thirdmetal gate structure 120″ in accordance with some embodiments. In someembodiments, sixth gate structure 520″ includes gate dielectric layer122, work function metal layer 124, and metal gate electrode layer 126.In addition, insulating layer 128 is formed on sixth gate structure 520″but not on fourth gate structure 518, for sixth gate structure 520″having a relatively small width. Therefore, third contact 134′ may be aself-aligned contact aligned to sixth gate structure 520″.

As shown in FIGS. 4B and 4C, semiconductor device structure 400 alsoincludes sealing layer 301, spacers 303, LDD regions 305, S/D regions307, CESL 309, ILD layer 112, and dielectric layer 130 in accordancewith some embodiments. These elements may be similar to, or the same asthose described previously, and detailed descriptions of these elementsare not repeated herein.

As described previously, the semiconductor device structures, such assemiconductor device structure 100, include the gate structures havingvarious channel lengths in accordance with some embodiments. Forexample, semiconductor device structure 100 includes wide metal gatestructure 118 and shortened narrow metal gate structure 120′, and widthW₁ of wide metal gate structure 118 is larger than width W₂ of shortenednarrow metal gate structure 120′. However, the difference between widthW₁ and width W₂ will result in different etching rate dues to theloading effect. Therefore, mask structure 311 is used to protect widemetal gate structure 118 during etching back process 127. As a result,the top portion of wide metal gate structure 118 is not removed duringetching back process 127, while the top portion of narrow metal gatestructure 120 is removed to form shortened narrow metal gate structure120′.

Accordingly, damage to wide metal gate structure 118 resulting from theloading effect during etching back process 127 is prevented, and thethreshold voltage of wide metal gate structure 118 remains as designed.

In addition, insulating layer 128 is formed on shortened narrow metalgate structure 120′ to prevent shortage between shortened narrow metalgate structure 120′ and contact 134. Therefore, contact 134 may be aself-aligned contact in accordance with some embodiments. Furthermore, aportion of contact 134 may be formed on insulating layer 128 and isseparated from shortened narrow metal gate structure 120′ by insulatinglayer 128.

Embodiments of a semiconductor device structure are provided. Thesemiconductor device structure includes a first metal gate structure anda second metal gate structure. An insulating layer is formed on thesecond metal gate structure. The first metal gate structure has a firstwidth, and the second metal gate structure has a second width smallerthan the first width. The second metal gate structure is shortened by anetching back process. In addition, during the etching back process, amask structure is formed on the first metal gate structure, such thatthe first metal gate structure is protected by the mask structure.Therefore, the first metal gate structure is not damaged by the etchingback process, and the threshold voltage of the first metal gatestructure remains as designed.

In some embodiments, a semiconductor device structure is provided. Thesemiconductor device structure includes a substrate and a first metalgate structure formed over the substrate. The first metal gate structurehas a first width. The semiconductor device structure further includes afirst contact formed adjacent to the first metal gate structure and asecond metal gate structure formed over the substrate. The second metalgate structure has a second width smaller than the first width. Thesemiconductor device structure further includes an insulating layerformed over the second metal gate structure and a second contactself-aligned to the second metal gate structure.

In some embodiments, a semiconductor device structure is provided. Thesemiconductor device structure includes a substrate and a first metalgate structure formed over the substrate. The semiconductor devicestructure further includes a first contact formed adjacent to the firstmetal gate structure and a second metal gate structure formed over thesubstrate. The semiconductor device structure further includes aninsulating layer formed over the second metal gate structure and asecond contact self-aligned to the second metal gate structure. Inaddition, the first metal gate structure has a first width and a firstheight, and the second metal gate structure has a second width and asecond height smaller than the first height, and a ratio of the firstwidth to the second width is in a range from about 2 to about 15.

In some embodiments, a method for forming a semiconductor devicestructure is provided. The method includes forming a first metal gatestructure and a second metal gate structure in an inter-layer dielectric(ILD) layer over a substrate. The method further includes forming a maskstructure on the first metal gate structure and exposing a top surfaceof the second metal gate structure. The method further includes etchinga top portion of the second metal gate structure to shorten the secondmetal gate structure. The method further includes forming an insulatinglayer on the second metal gate structure. The method further includesforming a first contact adjacent to the first metal gate structure and asecond contact self-aligned to the second metal gate structure. Inaddition, the first metal gate structure has a first width and thesecond metal gate structure has a second width smaller than the firstwidth.

Although embodiments of the present disclosure and their advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the disclosure as defined by the appendedclaims. For example, it will be readily understood by those skilled inthe art that many of the features, functions, processes, and materialsdescribed herein may be varied while remaining within the scope of thepresent disclosure. Moreover, the scope of the present application isnot intended to be limited to the particular embodiments of the process,machine, manufacture, composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosure of the present disclosure,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to be developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present disclosure. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

What is claimed is:
 1. A semiconductor device structure, comprising: afirst metal gate structure formed over a substrate, wherein the firstmetal gate structure has a first width, and the first metal gatestructure includes a first metal gate electrode; a second metal gatestructure formed over the substrate, wherein the second metal gatestructure has a second width smaller than the first width, and thesecond metal gate structure includes a second metal gate electrode; aninsulating layer formed over the second metal gate structure; asource/drain region adjacent the second metal gate structure; and acontact extending to the source/drain region, wherein the contactextending to the source/drain region interfaces the insulating layerover the second metal gate structure and the source/drain region, andwherein a first height of the first metal gate structure issubstantially equal to a sum of a second height of the second metal gatestructure and a third height of the insulating layer.
 2. Thesemiconductor device structure as claimed in claim 1, wherein a firstportion of a bottom surface of the contact interfaces the insulatinglayer.
 3. The semiconductor structure as claimed in claim 2, wherein asecond portion of the bottom surface of the contact interfaces thesource/drain region, the first portion and the second portion of thebottom surface being non-coplanar.
 4. The semiconductor device structureas claimed in claim 1, further comprising: spacers disposed adjacent thesecond metal gate structure.
 5. The semiconductor device structure asclaimed in claim 4, wherein the contact interfaces the spacers.
 6. Thesemiconductor device structure as claimed in claim 5, wherein a firstportion of a bottom surface of the contact interfaces the insulatinglayer, a second portion of the bottom surface of the contact interfacesthe source/drain region and a third surface between the first portionand the second portion of the bottom surface interfaces the spacers. 7.The semiconductor device structure as claimed in claim 1, wherein theinsulating layer is formed on the second metal gate structure but not onthe first metal gate structure, and a dielectric layer is formed aboveand in direct contact with a top of the insulating layer and a top ofthe first metal gate electrode.
 8. The semiconductor device structure asclaimed in claim 1, further comprising: another contact extending toanother source/drain region adjacent the first metal gate structure. 9.A semiconductor device structure, comprising: a first metal gatestructure formed over a substrate, wherein the first metal gatestructure includes a first metal gate electrode; a second metal gatestructure formed over the substrate, wherein the second metal gatestructure includes a second metal gate electrode; an insulating layerformed over the second metal gate structure; and a contact extending toa source/drain (S/D) region adjacent the second metal gate structure,wherein the contact has an extending portion extending into theinsulating layer, and a bottom surface of the extending portion of thecontact is lower than a top surface of the first metal gate electrode.10. The semiconductor device structure as claimed in claim 9, whereinthe first metal gate structure has a first height, the second metal gatestructure has a second height, the first height greater than the secondheight.
 11. The semiconductor device structure as claimed in claim 10,wherein the insulating layer formed over the second metal gate structurehas a third height, and a sum of the second height and the third heightis substantially equal to the first height.
 12. The semiconductor devicestructure as claimed in claim 9, wherein the first metal gate structurehas a first width and the second metal gate structure has a secondwidth, the first width greater than the second width.
 13. Thesemiconductor device structure as claimed in claim 9, wherein a portionof the contact is formed on the insulating layer.
 14. The semiconductordevice structure as claimed in claim 9, wherein the contact interfacesspacers on sidewalls of the second metal gate structure.
 15. Thesemiconductor device structure as claimed in claim 9, wherein the secondmetal gate structure is formed across a fin structure over thesubstrate.
 16. A semiconductor device structure, comprising: a firstgate structure formed over a substrate, wherein the first gate structurehas a first width, and the first gate structure includes a first metalgate electrode; a second gate structure formed over the substrate,wherein the second gate structure has a second width smaller than thefirst width, and the second gate structure includes a second metal gateelectrode; a source/drain region adjacent the second gate structure; aninsulating layer formed over the second gate structure; and a contactextending to the source/drain region, wherein the contact has anextending portion extending into the insulating layer, and a bottomsurface of the extending portion of the contact is lower than a topsurface of the first metal gate electrode, and wherein a first height ofthe first gate structure is substantially equal to a sum of a secondheight of the second gate structure and a third height of the insulatinglayer.
 17. The semiconductor device structure as claimed in claim 16,wherein the first gate structure and the second gate structure areformed across a fin structure over the substrate.
 18. The semiconductordevice structure as claimed in claim 16, further comprising: adielectric layer formed above and in direct contact with a top of theinsulating layer and a top surface of the first gate structure.
 19. Thesemiconductor device structure as claimed in claim 18, wherein thecontact is formed through the dielectric layer.
 20. The semiconductordevice structure as claimed in claim 16, wherein the first gatestructure is formed over a first fin structure and the second gatestructure is formed across a fin structure over the substrate.